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| DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * * * * Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Mechanical Data * * * * * * * * SOT-523 Drain Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.002 grams (approximate) D Gate ESD Protected up to 2kV TOP VIEW Gate Protection Source Diode EQUIVALENT CIRCUIT G S TOP VIEW Pin Out Configuration Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Value 60 20 300 800 Units V V mA Thermal Characteristics @TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 150 833 -65 to +150 Units mW C/W C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| Ciss Coss Crss Min 60 1.0 80 Typ 1.6 Max 1.0 10 2.5 2.0 3.0 50 25 5.0 Unit V A A V ms pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS =10V, ID = 0.2A VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1% Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN601TK Document number: DS30654 Rev. 5 - 2 1 of 4 www.diodes.com March 2009 (c) Diodes Incorporated DMN601TK ID, DRAIN CURRENT (A) VGS = 10V 8V 6V 5V 4V 3V 10V 8V 6V 5V 1.0 0.8 0.6 0.4 4V 0.2 0 0 3V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 2 VDS = 10V ID = 1mA 1.5 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () Pulsed 1 0.5 0 -50 -25 75 100 125 0 25 50 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 150 0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 0 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage DMN601TK Document number: DS30654 Rev. 5 - 2 2 of 4 www.diodes.com March 2009 (c) Diodes Incorporated DMN601TK RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE () IDR, REVERSE DRAIN CURRENT (A) VGS = 10V Pulsed ID = 300mA VGS = 0V Pulsed TA = 150 C TA = 125 C TA = 85 C TA = 25 C ID = 150mA T A = 0C TA = -25C TA = -55C 0 TCH, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) VGS = 10V IDR, REVERSE DRAIN CURRENT (A) VGS = 10V Pulsed TA = 25C TA = 150C TA = -55C TA= 25C Pulsed TA = 85C VGS = 0V 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 1 Ordering Information Part Number DMN601TK-7 Notes: (Note 6) Case SOT-523 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K7K = Product Type Marking Code YM = Date Code Marking Y = Year (ex: S = 2005) M = Month (ex: 9 = September) K7K YM Date Code Key Year Code Month Code 2005 S Jan 1 Feb 2 2006 T Mar 3 2007 U Apr 4 May 5 2008 V Jun 6 2009 W Jul 7 Aug 8 2010 X Sep 9 2011 Y Oct O Nov N 2012 Z Dec D March 2009 (c) Diodes Incorporated DMN601TK Document number: DS30654 Rev. 5 - 2 3 of 4 www.diodes.com DMN601TK Package Outline Dimensions A BC G H K M N J D L SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN601TK Document number: DS30654 Rev. 5 - 2 4 of 4 www.diodes.com March 2009 (c) Diodes Incorporated |
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